bfg 19s oct-26-1999 1 npn silicon rf transistor for low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 ghz at collector currents from 10 ma to 70 ma vps05163 1 2 3 4 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bfg 19s BFG19S 1 = e 2 = b 3 = e 4 = c sot-223 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 15 v collector-emitter voltage v ces 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 3 collector current i c 100 ma base current i b 12 total power dissipation , t s 75 c 1) p tot 1 w junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t stg -65 ... 150 thermal resistance junction - soldering point r thjs 75 k/w 1 t s is measured on the collector lead at the soldering point to the pcb
bfg 19s oct-26-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 15 - - v collector-emitter cutoff current v ce = 20 v, v be = 0 i ces - - 100 a collector-base cutoff current v cb = 10 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 2 v, i c = 0 i ebo - - 10 a dc current gain i c = 70 ma, v ce = 8 v h fe 40 100 220 -
bfg 19s oct-26-1999 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 70 ma, v ce = 8 v, f = 500 mhz f t 4 5.5 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 0.85 1.4 pf collector-emitter capacitance v ce = 10 v, f = 1 mhz c ce - 0.4 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 4.6 - noise figure i c = 20 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f = 1.8 ghz f - - 2.5 4 - - db power gain, maximum available f) i c = 70 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz f = 1.8 ghz g ma - - 13.5 8 - - transducer gain i c = 30 ma, v ce = 8 v, z s = z l = 50 , f = 900 mhz f = 1.8 ghz | s 21e | 2 - - 11 5 - - third order intercept point i c = 70 ma, v ce = 8 v, z s = z l = 50 , f = 900 mhz ip 3 - 35 - dbm 1 g ma = | s 21 / s 12 | (k-(k 2 -1) 1/2 )
bfg 19s oct-26-1999 4 total power dissipation p tot = f ( t a *, t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 100 200 300 400 500 600 700 800 900 1000 mw 1200 p tot t s t a permissible pulse load r thjs = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bfg 19s oct-26-1999 5 collector-base capacitance c cb = f ( v cb ) f = 1mhz 0 4 8 12 16 v 22 v cb 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 pf 2.6 c cb transition frequency f t = f ( i c ) v ce = parameter 0 20 40 60 80 ma 120 i c 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ghz 6.0 f t 5v 3v 2v 1v 0.7v power gain g ma , g ms = f ( i c ) f = 0.9ghz v ce = parameter 0 20 40 60 80 ma 120 i c 2 4 6 8 10 db 14 g 10v 5v 3v 2v 1v 0.7v power gain g ma , g ms = f ( i c ) f = 1.8ghz v ce = parameter 0 20 40 60 80 ma 120 i c -2 0 2 4 6 db 10 g 10v 5v 3v 2v 1v 0.7v
bfg 19s oct-26-1999 6 power gain g ma , g ms = f ( v ce ):_____ | s 21 | 2 = f ( v ce ):--------- f = parameter 0 2 4 6 8 v 12 v ce 0 2 4 6 8 10 db 14 g 0.9ghz 1.8ghz 1.8ghz 0.9ghz i c =70ma intermodulation intercept point ip 3 = f ( i c ) (3rd order, output, z s = z l =50 ) v ce = parameter, f = 900mhz 0 20 40 60 80 ma 120 i c 10 15 20 25 30 dbm 40 ip 3 8v 5v 3v 2v 1v power gain g ma , g ms = f ( f ) v ce = parameter 0.0 0.5 1.0 1.5 2.0 2.5 ghz 3.5 f 0 4 8 12 16 20 24 28 db 36 g 10v 2v 1v 0.7v i c =70ma power gain | s 21 | 2 = f ( f ) v ce = parameter 0.0 0.5 1.0 1.5 2.0 2.5 ghz 3.5 f -8 -4 0 4 8 12 16 20 24 db 32 s 21 10v 2v 1v 0.7v i c =70ma
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